Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si

Joerg Pezoldt; Christian Förster; Thomas Stauden; Volker Cimalla; Francisco M. Morales; Charbel Zgheib; Pierre M. Masri; Oliver Ambacher

doi:10.4028/www.scientific.net/MSF.556-557.203

Paper Titles

How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism
p.187

Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
p.191

Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
p.195

Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
p.199

Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
p.203

Trends in Dopant Incorporation for 3C-SiC Films on Silicon
p.207

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
p.213

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
p.219

Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
p.223

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Morphology and Stress Control in UHVCVD of...

Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si

Abstract:

The influence of the growth conditions on the 3C-SiC layer quality in terms of crystallinity, morphology and residual strain was investigated. In dependence on the chosen growth conditions the stress state can be varied between inhomogeneous and homogeneous strain. For the reduction of the residual strain an alternative route for the improvement of the epitaxial growth of 3CSiC( 100) on Si(100) was developed. It consists in covering the silicon wafers with germanium prior to the carbonization step. The achieved improvement in the residual strain and crystalline quality of the grown 3C-SiC layers is comparable to SOI substrates. These beneficial effects were reached by using a Ge coverage in the range of 0.5 to 1 monolayer with respect to the silicon surface.

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Materials Science Forum (Volumes 556-557)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.203

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Online since:

September 2007

Authors:

Joerg Pezoldt, Christian Förster, Thomas Stauden, Volker Cimalla, Francisco M. Morales, Charbel Zgheib, Pierre M. Masri, Oliver Ambacher

Keywords:

3C-SiC, Chemical Vapor Deposition (CVD), Heteroepitaxy, Silicon, Stress

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