Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

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Abstract:

Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 23 6) reflection for the wafer in the normal position. These measurements were corrected for the ‘wobble’ in the instrument by scanning a 4” (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.

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Periodical:

Materials Science Forum (Volumes 556-557)

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213-218

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Online since:

September 2007

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Hobgood, M. Brady, M. Calus, J. Jenny, R. Leonard, D. Maita, G. Muller, A. Powell, V. Tsvetkov, R. Glass, and C. Carter: Mater. Sci. Forum, Vol. 457-460 (2004), p.3.

DOI: 10.4028/www.scientific.net/msf.457-460.3

Google Scholar

[2] J. Takahashi, N. Ohtani, and M. Kanaya: J. Crystal Growth, Vol. 167 (1996), p.596.

Google Scholar

[3] A. Ellison, H. Radamson, M. Tuominen, S. Milita, C. Halin, A. Henry, Ol Dordina, T. Tuomi, R. Yakimova, R. Madar, and E. Janzen: Diamond Rel. Mater., Vol. 6 (1997), p.1369.

DOI: 10.1016/s0925-9635(97)00086-1

Google Scholar

[4] S. Ha, N.T. Nuhfer, G.S. Rohrer, M. De Graef, and M. Skowronski: J. Crystal Growth, Vol. 308-315 (2000).

Google Scholar