Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide

Yi Chen; Govindhan Dhanaraj; William M. Vetter; Rong Hui Ma; Michael Dudley

doi:10.4028/www.scientific.net/MSF.556-557.231

Paper Titles

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
p.213

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
p.219

Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
p.223

An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
p.227

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
p.231

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
p.235

Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
p.239

Defect Etching of Non-Polar and Semi-Polar Faces in SiC
p.243

Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
p.247

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Behavior of Basal Plane Dislocations and Low Angle...

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide

Abstract:

The interactions between basal plane dislocations (BPDs) and threading screw and edge dislocations (TSDs and TEDs) in hexagonal SiC have been studied using synchrotron white beam x-ray topography (SWBXT). TSDs are shown to strongly interact with advancing basal plane dislocations (BPDs) while TEDs do not. A BPD can cut through an individual TED without the formation of jogs or kinks. The BPDs were observed to be pinned by TSDs creating trailing dislocation dipoles. If these dipoles are in screw orientation segments can cross-slip and annihilate also potentially leaving isolated trailing loops. The three-dimensional (3D) distribution of BPDs can lead to aggregation of opposite sign edge segments leading to the creation of low angle grain boundaries (LAGBs) characterized by pure basal plane tilt of magnitude determined by the net difference in densities of the opposite sign dislocations. Similar aggregation can also occur against pre-existing prismatic tilt boundaries made up of TED walls with the net difference in densities of the opposite sign dislocations contributing some basal plane tilt character to the LAGB.