Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

Koichi Amari; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.556-557.1039

Paper Titles

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
p.1007

Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
p.1011

Advances in AlGaN/GaN/SiC Microwave Devices
p.1017

A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
p.1023

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
p.1027

Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
p.1031

Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
p.1035

Impact of Acceptor Concentration on Electronic Properties of n⁺-GaN/p⁺-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
p.1039

Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
p.1043

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Impact of Acceptor Concentration on Electronic...

Impact of Acceptor Concentration on Electronic Properties of n⁺-GaN/p⁺-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

Abstract:

The electrical properties of n+-GaN/p+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p+-SiC epilayers (Na) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with Na ~ 1x1019 cm-3 were dominated by tunneling-assisted current. The diodes with Na ~ 1x1018 cm-3 exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (Na<1016cm-3), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2006

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

1039-1042

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.1039

Citation:

Cite this paper

Online since:

September 2007

Authors:

Koichi Amari, Jun Suda, Tsunenobu Kimoto

Keywords:

EL, Emitter Efficiency, Herojunction Bipolar Transistor (HBT), Heterojunction, Injection, MBE

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. I. Pankove, S. -S. Chang, H. C. Lee, R. Molnar, T.D. Moustakas and B. Van Zeghbroeck: Tech. Digest IEDM (1994), p.389.

Google Scholar

[2] J. Suda, Y. Nakano, S. Shimada, K. Amari and T. Kimoto: Mat. Sci. Forum Vol. 527-529 (2006), p.1545.

Google Scholar

[3] N. Onojima, J. Suda, and H. Matsunami, Jpn. J. Appl. Phys. Vol. 42 (2003), p.445.

Google Scholar

[4] V. V. Afanasev, M. Bassler, G. Pensl, M. J. Schulz, and E. S. V. Kamienski: J. Appl. Phys. Vol. 79 (1996), p.3108.

Google Scholar

[5] P. Käckell, B. Wenzien, and F. Bechstedt: Phys. Rev. B Vol. 50 (1994), p.10761.

Google Scholar

[6] J. M. Langer and H. Heinrich: Phys. Rev. Lett. Vol. 55 (1985), p.1414 Ec Ev ∆Ec~0. 99 eV ∆Ev~1. 15eV ∆Ev~1. 13eV (a) 4H-SiC / GaN (b) 6H-SiC / GaN 4H-SiC Eg= 3. 26 eV 6H-SiC Eg= 3. 02 eV GaN Eg= 3. 39 eV GaN Eg= 3. 39 eV ∆Ec~0. 73 eV.

DOI: 10.1021/acsami.9b17679.s001

Google Scholar