Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates

Gholam Reza Yazdi; Mikael Syväjärvi; Remigijus Vasiliauskas; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.556-557.1031

Paper Titles

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
p.1007

Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
p.1011

Advances in AlGaN/GaN/SiC Microwave Devices
p.1017

A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
p.1023

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
p.1027

Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
p.1031

Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
p.1035

Impact of Acceptor Concentration on Electronic Properties of n⁺-GaN/p⁺-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
p.1039

Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
p.1043

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Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates

Abstract:

In this report we present results on growth and characterization of AlN wires and thin films on SiC substrates. We have employed PVT technique in close space geometry for AlN deposition on SiC off oriented substrates, most of which were prepared to have scratch-free smooth as-grown surface by SiC sublimation epitaxy. By manipulating the surface kinetics we have been able to determine growth conditions yielding discontinuous or continuous morphologies corresponding to nanowires and thin films, respectively. A particular feature of the latter experiments is the fast temperature ramp up at the growth initiation. The AlN surface morphology was characterized by optical, AFM and XRD tools, which showed good crystal quality independent of the growth mode.