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Influence of Ti on Oxide Formation During Isothermal Oxidation of 800H Ni-Based Alloys Noraziana PARIMIN1,a* and Esah HAMZAH2,b 1Faculty of Chemical Engineering Technology, Universiti Malaysia Perlis, 02600 Arau, Perlis, Malaysia 2Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia anoraziana@unimap.edu.my, besah@mail.fkm.utm.my Keywords: Isothermal oxidation, 800H Ni-based alloy, high temperature oxidation, alloying element.
Forum (2020) 40-45
Forum (2020) 58-64
Allen, Corrosion Behavior of Ni-Base Alloys for Advanced High Temperature Water-Cooled Nuclear Plants, Corros.
Forum (2020) 21-27.

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In Situ Nitridation of SiC Surface Merve Yakut1,a*, Atreyee Roy1,b, Faiz Arith2,c Andrew Whitworth3,d, Andrew Alexander3, , Jacek Gryglewicz3,f, Jake Sheriff1,g, Sarah Olsen1,h, Konstantin Vasilevskiy1,i and Anthony O’Neill1,j* 1School of Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, United Kingdom 2Faculty of Electronic and Computer Engineering, UTeM, 76100 Durian Tunggal, Melaka, Malaysia 3INEX Microtechnology Ltd., Newcastle upon Tyne, NE1 7RU, United Kingdom am.t.yakut@newcastle.ac.uk, ba.roy9@newcastle.ac.uk, cfaiz.arith@utem.edu.my dandrew.whitworth@inexmicro.com, eandrew.alexander@inexmicro.com, fjacek.gryglewicz@inexmicro.com, gjake.sheriff@newcastle.ac.uk, hsarah.olsen@newcastle.ac.uk, ikonstantin.vasilevskiy@newcastle.ac.uk, janthony.oneill@newcastle.ac.uk Keywords: SiO2/SiC interface, mobility, MOSFET, deposited gate dielectric, nitridation, N2O, PECVD.
Vasilevskiy (Eds.), Advancing Silicon Carbide Electronics Technology II, Core Technologies of Silicon Carbide Device Processing, Materials Research Forum LLC, Millersville, 2020, pp. 1-62
Vasilevskiy (Eds.), Advancing Silicon Carbide Electronics Technology II, Core Technologies of Silicon Carbide Device Processing, Materials Research Forum LLC, Millersville, 2020, pp. 63-174
O'Neill, High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack, Materials Science Forum, Trans Tech Publ, 2018, pp. 494-497

To obtain such materials, advanced technologies are currently being used [3], which make it possible to increase the operational reliability and durability of such products.
The power sources for them and the control system constitute a single electrical engineering complex, which makes it possible to control the temperature of the single crystal during its growth.
[2] Advances in Silicon Solar Cells, S.
Sydorets, Physical and Mechanical Properties of High-Strength Steel Joints Produced by Laser Welding, in: 2017 IEEE International Scientific Forum on Applied Physics and Engineering (YSF-2017), IEEE, Lviv, 2017, pp. 88-91
Materials Science Forum. 945 (2019) 98-103.

Zhang: Advanced Materials Research Vol. 76-78 (2009), p. 3-8 [8] T.
Zhang: Key Engineering Materials Vol. 443 (2010), p. 388-393 [9] J.
Zhuang: Advanced Materials Research Vol.102-104(2010), p.733-737 [10] J.
Huang: Key Engineering Materials Vol. 455(2011), p.580-584 [11] J.
Yuan: Advanced Materials Research Vol. 505(2012), p. 26-30

Forming and Control of Feed-Direction Burr in Drilling Guicheng Wang 1,a , Shutian Fan 1,b, Yunming Zhu 1,c, Hongjie Pei1 , Haijun Qu1 and Qinfeng Li1 1School of Mechanical Engineering, Jiangsu University, Zhenjiang, China, 212013 awgch@ujs.edu.cn; bstfan@ujs.edu.cn; cy_m_zhui@ujs.edu.cn Keywords: Drilling, feed-direction burr, Deburring technology, Precision machining Abstract.
Furthermore, a certain number of measures to prevent and decrease the burr in drilling process are advanced.
In recent years, engineers and scholars of some countries advanced in machinery engineering have begun to study the forming principle of cutting burrs and deburring technology and some positive results are achieved [1-4], which promoted greatly development of mechanical technology.
Pei: Materials Science Forum, Vol.532-533 (2006), pp.580
Zhang: Key Engineering Materials, Vols.259-260 (2004), pp.278-281.

Callister, Jr., Materials science and engineering: an introduction. 7th ed., John Wiley & Sons, Inc., New York, USA (2007) [3] D.A.
Itaya, Modeling of strain-stress behavior for advanced drying.
Forum 312-315 (2011) 971-976
Forum 353 (2014) 116-120
Doctoral Thesis in Process Engineering, Federal University of Campina Grande, Campina Grande, Brazil 174 (2009).

Shape Memory Alloy Applications in Bone Fixation: State of the Art Mohd Roshdi Hassana,Yong Thian Hawb Department of Mechanical and Manufacturing Engineering University Putra Malaysia, 43400 Serdang, Selangor, Malaysia.
Researchers focused on incorporating advanced industrial materials, which are often developed for aeronautics, industrial, or military-specific applications, for use in human implantology.
Conf. on Medical and Biomedical Engineering, Chicago, IL 1969)
Material Science Forum;Vol.394-395,pp.45-48.(2002) [25] K.
Materials Science Forum. 394-395, 17-24. (2002) [26] M.

Structural characterization of mechanically alloyed AlMg-CeO2 composite Tomasz Skrzekut1,a*, Anna Kula1,b*, Ludwik Blaz1,c Grzegorz Wloch1,d and Makoto Sugamata2,e 1 Faculty of Non-Ferrous Metals, AGH – University of Science and Technology, 30-059 Cracow, Poland 2 Department of Mechanical Engineering, College of Industrial Technology, Nihon University, 1-2-1 Izumi-cho, Narashino Chiba 275 – 8575, Japan a skrzekut@agh.edu.pl, b kula@agh.edu.pl, c blaz@agh.edu.pl, d gwloch@agh.edu.pl e sugamata@cit.nihon-u.ac.jp, Keywords: composite, mechanical alloying, differential scanning calorimetry, SEM, TEM Abstract.
Combination of aluminum/magnesium matrix and ceramic reinforcement are often used to manufacture advanced light metal composites with unique mechanical properties, which combine the ductility of the metal matrix and the high stiffness of the ceramic reinforcement.
Mallick: Composites Engineering Handbook, Marcel Dekker Inc., New York, 1997
Forum 539-543 (2007) 854
Forum 396-402 (2002) 161-166

Scenario Analysis of Denitration for Chinese Coal-fired Power Generation Xiance Meng1, 2, a, Chen Li 1, b, *, Suping Cui1, c, Lili Zhao1, d, Xianzheng Gong1, e and Zhihong Wang1, f 1School of Materials Science and Engineering, Centre of China National Material Life Cycle Assessment (CNMLCA), Beijing University of Technology, Beijing, 100124, China 2China Development Strategy Institute for Building Materials Industry, Beijing, 100035, China axiancem@cbm.com.cn, blichen1102@emails.bjut.edu.cn, ccuisuping@bjut.edu.cn dbjgyzll@163.com, egongxianzheng@bjut.edu.cn, fwangzhihong@bjut.edu.cn Keywords: Electricity, CO2, NOx, Selective non-catalytic reduction (SNCR), Urea.
Japan, successfully enabling less NOx emissions and other pollution and CO2 due to advanced management and technology, was selected as an example country to analyze the potentials in decreasing NOx emissions.
Conclusions Exploring the denitration strategies for coal-fired power plant, through a systemic approach can provide an integrated environmental and engineering view.
Forum, 743-744 (2013) 252-257 [14] C.
Forum, 743-744 (2013) 802-806 [15] China Centre of National Material Life Cycle Assessment (CNMLCA), Thermal Power Stations Database.

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure Yuichiro Nanen1,a , Hironori Yoshioka1,b , Masato Noborio1,c , Jun Suda1,d and Tsunenobu Kimoto1-2,e 1 Department of Electronic Science and Engineering, Kyoto University A1-303 Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan 2 Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University a nanen@semicon.kuee.kyoto-u.ac.jp, byoshioka@semicon.kuee.kyoto-u.ac.jp, cnoborio@semicon.kuee.kyoto-u.ac.jp, dsuda@kuee.kyoto-u.ac.jp, ekimoto@kuee.kyoto-u.ac.jp Keywords: MOSFET, multi-gate transistor, three-dimensional gate structure, (11-20) Abstract. 4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has a top channel on the (0001) face and side-wall channels on the {11-20} face have been fabricated.
In advanced Si MOSFETs, MOSFETs with multi-gate structures have been extensively developed in order to increase on-current while minimizing the short-channel effects [4].
Forum Vols. 389-393 (2002), p. 985 [3] H.
Forum Vols. 527-529 (2006), p. 987 (4) , (4) , (5) . (5) .