Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

Yuichiro Nanen; Hironori Yoshioka; Masato Noborio; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.615-617.753

Paper Titles

Silicon Carbide Static Induction Transistor with Implanted Buried Gate
p.735

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
p.739

Critical Issues for MOS Based Power Devices in 4H-SiC
p.743

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
p.753

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
p.761

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Improved On-Current of 4H-SiC MOSFETs with a...

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

Abstract:

4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has a top channel on the (0001) face and side-wall channels on the {11-20} face have been fabricated. The three-dimensional gate structures with a 1-5 m width and 0.8 m height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition and then annealed in N2O ambient at 1300°C. The fabricated MOSFETs have exhibited superior characteristics: ION / IOFF, the subthreshold swing and VTH are 1010, 250 mV/decade and 3.5 V, respectively. The drain current normalized by the gate width is increasing with decreasing the gate width. The normalized drain current of a 1 m-wide MOSFET is ten times higher than that of a conventional planar MOSFET.