Silicon Carbide and Related Materials 2008
Paper Title Page
Abstract: Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC-...
Abstract: Two SiC single crystal ingots were prepared using sublimation PVT techniques through the different process procedure and then their crystal...
Abstract: Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has...
Abstract: 4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC...
Abstract: n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been...
Abstract: This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray...