Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Elif Berkman, R.T. Leonard, Michael J. Paisley, Y. Khlebnikov, Michael J. O'Loughlin, Albert A. Burk, Adrian R. Powell, D.P. Malta, E. Deyneka, M.F. Brady, I. Khlebnikov, Valeri F. Tsvetkov, H.McD. Hobgood, Joseph J. Sumakeris, C. Basceri, Vijay Balakrishna, Calvin H. Carter Jr., C. Balkas

Abstract: Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC-...

Authors: Jung Woo Choi, Chang Hyun Son, Jong Mun Choi, Gi Sub Lee, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku

Abstract: Two SiC single crystal ingots were prepared using sublimation PVT techniques through the different process procedure and then their crystal...

Authors: Philip Hens, Ulrike Künecke, Katja Konias, Rainer Hock, Peter J. Wellmann

Abstract: Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has...

Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek

Abstract: 4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC...

Authors: Katarzyna Racka, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka

Abstract: n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been...

Authors: Peter J. Wellmann, Katja Konias, Philip Hens, Rainer Hock, Andreas Magerl

Abstract: This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray...


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