Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Christopher Locke, Christopher L. Frewin, Jing Wang, Stephen E. Saddow

Abstract: A novel method for growing highly-crystalline 3C-SiC on an oxide release layer via a poly-Si seed layer is reported. Silicon carbide’s...

Authors: Hideki Shimizu, Akira Kato

Abstract: In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of...

Authors: Günter Wagner, M. Schmidbauer, K. Irmscher, P. Tanner, R. Fornari

Abstract: Single-crystalline 3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition....

Authors: Marcin Zielinski, Marc Portail, Sebastien Roy, S. Kret, Thierry Chassagne, M. Nemoz, Yvon Cordier

Abstract: We analyze in detail the evolution of curvature of 3C-SiC layers grown on vicinal silicon substrates. A common feature of (100) and (111)...

Authors: Boris M. Sinelnikov, Vitaly A. Tarala, Ivan S. Mitchenko

Abstract: The possibility of silicon carbide films production out of organosilicon chlorine-containing monomers is under analysis in this research....

Authors: Sergey P. Lebedev, Alexander A. Lebedev, Pavel L. Abramov, Elena V. Bogdanova, D.K. Nel'son, Gagik A. Oganesyan, Alla S. Tregubova, Rositza Yakimova

Abstract: Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence...

Authors: Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch, Rositza Yakimova

Abstract: The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis...

Authors: Maya Marinova, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Olivier Kim-Hak, Jean Lorenzzi, Gabriel Ferro

Abstract: The use of Ge very rich Si-Ge liquid phase during the heteroepitaxial growth of 3C-SiC on Si-face, on-axis 6H-SiC(0001) substrate by...

Authors: Remigijus Vasiliauskas, Mikael Syväjärvi, Milena Beshkova, Rositza Yakimova

Abstract: The initial stage of heteroepitaxial growth of 3C-SiC and homoepitaxial growth of 6H-SiC on nominal 6H-SiC on-axis substrates has been...

Authors: Olivier Kim-Hak, Gabriel Ferro, Jacques Dazord, Patrick Chaudouët, Didier Chaussende

Abstract: Like on 6H-SiC substrates, 3C-SiC islands precipitation was found to be the initial stage of the VLS growth of 3C-SiC layers on 4H-SiC...


Showing 41 to 50 of 247 Paper Titles