Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Siegmund Greulich-Weber, M. Zöller, B. Friedel

Abstract: The solar cell concept presented here is based on 3C-SiC nano- or microwires and conju¬gated polymers. Therefore the silicon carbide wires...

239
Authors: Gan Feng, Jun Suda, Tsunenobu Kimoto

Abstract: The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking...

245
Authors: Ryohei Tanuma, Tae Tamori, Yoshiyuki Yonezawa, Hirotaka Yamaguchi, Hirofumi Matsuhata, Kenji Fukuda, Kazuo Arai

Abstract: This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam...

251
Authors: Jawad ul Hassan, Peder Bergman

Abstract: Thick 4H-SiC epitaxial layers have been characterized using high-resolution lifetime mapping. The lifetime maps are obtain by the detection...

255
Authors: Felix Oehlschläger, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, Peter J. Wellmann

Abstract: Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work...

259
Authors: Ivan G. Ivanov, Jawad ul Hassan, Anne Henry, Erik Janzén

Abstract: The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence...

263
Authors: Dorothea Werber, Gerhard Wachutka

Abstract: A change of the electron and hole densities n and p and of the lattice temperature T modulates the real optical refractive index nopt of...

267
Authors: Thierry Ouisse, Didier Chaussende, Laurent Auvray, Etienne Pernot, Roland Madar

Abstract: The dislocation-induced birefringence of Silicon Carbide (SiC) is analytically and quantitatively modelled by using the adequate SiC data. A...

271
Authors: Justinas Palisaitis, Peder Bergman, P.O.Å. Persson

Abstract: We have performed 2D X-ray diffraction mapping of the SiC lattice basal plane orientation over full 2” SiC substrates. Measurements of the...

275
Authors: Marina G. Mynbaeva, Alexander A. Lebedev

Abstract: An effective low-cost technique for rapid characterization of SiC ingots at the early stage of substrate manufacturing process is proposed....

279

Showing 61 to 70 of 247 Paper Titles