Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam three-dimensional topography. Strain analysis shows that typical screw dislocations having a symmetric strain field tend to cause microplasma breakdown, whereas deformed SDs do not. The symmetry break in SDs will relax the focussing of strain and lessen the formation of defects, thereby leading to the desirable non-leak property.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
R. Tanuma et al., "Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography", Materials Science Forum, Vols. 615-617, pp. 251-254, 2009