Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography

Abstract:

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This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam three-dimensional topography. Strain analysis shows that typical screw dislocations having a symmetric strain field tend to cause microplasma breakdown, whereas deformed SDs do not. The symmetry break in SDs will relax the focussing of strain and lessen the formation of defects, thereby leading to the desirable non-leak property.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

251-254

DOI:

10.4028/www.scientific.net/MSF.615-617.251

Citation:

R. Tanuma et al., "Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography", Materials Science Forum, Vols. 615-617, pp. 251-254, 2009

Online since:

March 2009

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