Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same substrate, various I-Vs shapes are obtained (linear, non linear symmetric, and asymmetric). With the assistance of simulation, we show that this is a result of different values of Schottky Barrier Heights (SBH) at Source (S) / Drain (D) contacts of FETs. An origin for this might be a non uniformity in annealing, NW doping level and high interface traps density (that pins the Fermi level) as well as the high sensitivity of the metal-NW contacts to local surface contaminations.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
K. Rogdakis et al., "Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics", Materials Science Forum, Vols. 615-617, pp. 235-238, 2009