Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

Abstract:

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In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same substrate, various I-Vs shapes are obtained (linear, non linear symmetric, and asymmetric). With the assistance of simulation, we show that this is a result of different values of Schottky Barrier Heights (SBH) at Source (S) / Drain (D) contacts of FETs. An origin for this might be a non uniformity in annealing, NW doping level and high interface traps density (that pins the Fermi level) as well as the high sensitivity of the metal-NW contacts to local surface contaminations.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

235-238

DOI:

10.4028/www.scientific.net/MSF.615-617.235

Citation:

K. Rogdakis et al., "Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics", Materials Science Forum, Vols. 615-617, pp. 235-238, 2009

Online since:

March 2009

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