Silicon Carbide and Related Materials 2008

Silicon Carbide and Related Materials 2008

Subtitle:

ECSCRM 2008

Description:

Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.

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Info:

Editors:
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
THEMA:
TGM
BISAC:
SCI077000
Details:
Selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 – 11, Barcelona, Spain
Pages:
1030
Year:
2009
ISBN-13 (hardcover):
9780878493340
ISBN-13 (CD):
9783908454168
ISBN-13 (eBook):
9783038132530
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Review from Ringgold Inc., ProtoView: Wide-bandgap semiconductors are promising materials for high-power, high-frequency, and high-temperature electronics use, as well as for short-wavelength light-emitters. Papers from a September 2008 offer an overview of the field. Papers are arranged into seven chapters on SiC and related materials, bulk and epi-growth, characterization of SiC and related materials, devices, and applications. This year, there were increased contributions in areas including cutting-edge SiC nanostructures, graphene, and cubic silicon carbide. Applications of SiC technologies to renewable energy systems and space domains are highlighted. Other areas examined are the growth of 4H-SiC single crystals on 6H-SiC seeds with an open backside by PVT method, characterization of 6H-SiC single crystals using different source materials, observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffraction, and nucleation and growth of 3C-SiC single crystals from the vapor phase. B&w images are included.