Books by Keyword: Breakdown Voltage

Description: This special edition analyses recent technological advances, modern design methodologies, and performance evaluation and parameters optimisation techniques of SiC-based power devices.

Description:

This edition is a collection of the selected papers presented at the 1st International Conference on Advancement of Materials, Manufacturing and Devices (ICAMaDe 2021), held on June 22, 2021, in Kangar, Malaysia. It is devoted to property research and applying modern functional ceramic materials in the area of energy storage and energy conversion, and also analysis of breakdown voltage in low-power electronic devices. The book will be helpful to specialists in materials used in energy storage and conversion and power electronics.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The last five decades have seen an explosion of interest in exploring the possibilities of new materials for industrial and commercial applications. Materials Technology is now recognized as being one of the most important factors driving the development and growth of a nation’s economy. The sciences of design, processing, manufacturing and materials utilization are crucial elements contributing to the growth of new industries. The need for new discoveries in Materials Science has encouraged scientists from around the world to meet regularly and to discuss the latest advances and innovations.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.

Description: This comprehensive volume covers practically all aspects concerning the passivity of metallic and semiconductor materials. Recent advances resulting from new materials in new environments, from metals and insulating films in multilayer structures, and from the chemical side of semiconductor technology are presented.