Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Abstract:

Article Preview

The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers. Strong PL emissions from the SFs are observed even at room temperature. It is found that each kind of SF shows the distinct PL emission behaviours. Three kinds of SFs: intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples based on the micro-PL spectra. At the same time, the micro-PL intensity mapping at the emission band of each SF has been performed to spatially profile the SFs. The shapes, distributions, and densities of SFs in the epilayers are then presented. The PL emission behaviours of each SF at low temperature are also studied.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

245-250

DOI:

10.4028/www.scientific.net/MSF.615-617.245

Citation:

G. Feng et al., "Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping", Materials Science Forum, Vols. 615-617, pp. 245-250, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.