Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Gan Feng; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.615-617.245

Paper Titles

Formation of Different Carbon Phases on SiC
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Study of the Electrical Characteristics of the CNT/SiC Interface
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Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
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Textile Solar Cells Based on SiC Microwires
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Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
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Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
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Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
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Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
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Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
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Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Abstract:

The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers. Strong PL emissions from the SFs are observed even at room temperature. It is found that each kind of SF shows the distinct PL emission behaviours. Three kinds of SFs: intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples based on the micro-PL spectra. At the same time, the micro-PL intensity mapping at the emission band of each SF has been performed to spatially profile the SFs. The shapes, distributions, and densities of SFs in the epilayers are then presented. The PL emission behaviours of each SF at low temperature are also studied.