Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC

Ivan G. Ivanov; Jawad ul Hassan; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.615-617.263

Paper Titles

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
p.251

Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
p.255

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
p.259

Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
p.263

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

An Effective Method of Characterization of SiC Substrates
p.279

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Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC

Abstract:

The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence in 4H SiC. Two main sets of phonon replicas can be observed with selective excitation, which are attributed to two of the no-phonon lines observed in the spectrum. Some of the excited states are also attributed to one of the no-phonon lines on the ground of the selectively excited spectra. A tentative explanation of the observed features in terms of multiple bound excitons is proposed.