Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC

Abstract:

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The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence in 4H SiC. Two main sets of phonon replicas can be observed with selective excitation, which are attributed to two of the no-phonon lines observed in the spectrum. Some of the excited states are also attributed to one of the no-phonon lines on the ground of the selectively excited spectra. A tentative explanation of the observed features in terms of multiple bound excitons is proposed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

263-266

DOI:

10.4028/www.scientific.net/MSF.615-617.263

Citation:

I. G. Ivanov et al., "Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 263-266, 2009

Online since:

March 2009

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Price:

$35.00

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