Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

Felix Oehlschläger; Sandrine Juillaguet; Hervé Peyre; Jean Camassel; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.615-617.259

Paper Titles

Textile Solar Cells Based on SiC Microwires
p.239

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
p.251

Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
p.255

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
p.259

Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
p.263

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

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Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

Abstract:

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.