Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
F. Oehlschläger et al., "Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity", Materials Science Forum, Vols. 615-617, pp. 259-262, 2009