Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

Abstract:

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Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

259-262

DOI:

10.4028/www.scientific.net/MSF.615-617.259

Citation:

F. Oehlschläger et al., "Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity", Materials Science Forum, Vols. 615-617, pp. 259-262, 2009

Online since:

March 2009

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Price:

$35.00

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