Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping

Jawad ul Hassan; Peder Bergman

doi:10.4028/www.scientific.net/MSF.615-617.255

Paper Titles

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
p.235

Textile Solar Cells Based on SiC Microwires
p.239

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
p.251

Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
p.255

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
p.259

Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
p.263

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

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Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping

Abstract:

Thick 4H-SiC epitaxial layers have been characterized using high-resolution lifetime mapping. The lifetime maps are obtain by the detection of photoluminescence decay of the band gap emission. Full wafers mappings with 200 m resolution reveal lifetime variations that can be associated with structural defects replicated from the substrate, and variations in epitaxial growth conditions due to the susceptor design. High resolution mapping over smaller regions with down to 20 m step size, reveals local lifetime reductions associated with different structural defects in the epitaxial layer. Identified defects that influence the lifetime are the carrot defect, different types of in-grown stacking faults, and an unidentified defect associated with a pair of basal plane dislocations on the surface. Also clusters of threading screw dislocations, probably originating from a dissociated micropipe in the substrate, are found to reduce the lifetime.