Dislocation-Induced Birefringence in Silicon Carbide

Thierry Ouisse; Didier Chaussende; Laurent Auvray; Etienne Pernot; Roland Madar

doi:10.4028/www.scientific.net/MSF.615-617.271

Paper Titles

Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
p.255

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
p.259

Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
p.263

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

An Effective Method of Characterization of SiC Substrates
p.279

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Dislocation-Induced Birefringence in Silicon...

Dislocation-Induced Birefringence in Silicon Carbide

Abstract:

The dislocation-induced birefringence of Silicon Carbide (SiC) is analytically and quantitatively modelled by using the adequate SiC data. A good agreement can be obtained between theory and experiment, provided that a background residual (uniaxial) stress is added to the local dislocation-induced stress. Observations are compatible with or predictable from the Burgers vector values, so that birefringence reveals an interesting tool for probing the nature of the dislocations associated, e.g., to micropipes, also faster than and complementary to the more involved transmission electron microscopy (TEM) technique.