Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Gil Yong Chung; Mark J. Loboda; M.J. Marninella; D.K. Schroder; Tamara Isaacs-Smith; John R. Williams

doi:10.4028/www.scientific.net/MSF.615-617.283

Paper Titles

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

An Effective Method of Characterization of SiC Substrates
p.279

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Carrier Generation Lifetime in 4H-SiC Epitaxial...

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Abstract:

The pulsed MOS-C (Metal Oxide Semiconductor-Capacitor) technique was used to measure generation lifetimes in 4H-SiC epitaxial wafers. The ratio of generation to recombination lifetime has been investigated to understand the dominant defect for generation lifetime. The EH6/7 defect level is considered to limit generation lifetime and field enhanced emission is proposed to explain extremely large variation of generation lifetime in a small area. Generation lifetime is limited by dislocations when they are above a threshold density of about 106cm-2. Generation lifetimes measured on 4 and 8 degree off-cut angle epi-substrates are very comparable.