Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

Abstract:

Article Preview

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

299-302

DOI:

10.4028/www.scientific.net/MSF.615-617.299

Citation:

C. J. Cochrane et al., "Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors", Materials Science Forum, Vols. 615-617, pp. 299-302, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.