Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283
p.283
Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287
p.287
Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291
p.291
Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295
p.295
Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299
p.299
Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303
p.303
Features of Hot Hole Transport in 6Н-SiC
p.307
p.307
Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311
p.311
Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315
p.315
Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
Abstract:
We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.
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Periodical:
Materials Science Forum (Volumes 615-617)
Pages:
299-302
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Online since:
March 2009
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© 2009 Trans Tech Publications Ltd. All Rights Reserved
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