Features of Hot Hole Transport in 6Н-SiC

Vladimir Ilich Sankin; Pavel P. Shkrebiy; Alla A. Lepneva; Andrey G. Ostroumov; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.615-617.307

Paper Titles

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303

Features of Hot Hole Transport in 6Н-SiC
p.307

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311

Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

Microhardness of 6H- and 4H-SiC Substrates
p.323

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Features of Hot Hole Transport in 6Н-SiC

Features of Hot Hole Transport in 6Н-SiC

Abstract:

In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible. Unlike scattering on deformation potential, the drift mobility in this case increases continuously. As this phenomenon may be realized in SiC hot hole transport, I-F characteristics in 6H-SiC with Na-Nd ~ 5x1017 cm-3 have been studied at electrical field 1-150 kV/cm for temperature from 300 to 600K. Furthermore, we studied the breakdown of Al impurity.