Features of Hot Hole Transport in 6Н-SiC

Abstract:

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In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible. Unlike scattering on deformation potential, the drift mobility in this case increases continuously. As this phenomenon may be realized in SiC hot hole transport, I-F characteristics in 6H-SiC with Na-Nd ~ 5x1017 cm-3 have been studied at electrical field 1-150 kV/cm for temperature from 300 to 600K. Furthermore, we studied the breakdown of Al impurity.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

307-310

DOI:

10.4028/www.scientific.net/MSF.615-617.307

Citation:

V. I. Sankin et al., "Features of Hot Hole Transport in 6Н-SiC", Materials Science Forum, Vols. 615-617, pp. 307-310, 2009

Online since:

March 2009

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Price:

$35.00

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