Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals

Georgios Manolis; Kęstutis Jarašiūnas; Irina G. Galben-Sandulache; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.615-617.303

Paper Titles

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303

Features of Hot Hole Transport in 6Н-SiC
p.307

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311

Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Optical Investigation of Electronic Properties in...

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals

Abstract:

We applied a picosecond dynamic grating technique for studies of nonequilibrium carrier dynamics in a 0.8 mm thick bulk 3C-SiC crystal grown by the continuous feed physical vapor transport (CF-PVT) on 6H-SiC (0001) substrate. Investigation of carrier dynamics at surface or bulk excitation conditions was performed for excess carrier density in range from ~ 1017 cm-3 to ~ 1020 cm3 using for excitation weakly or strongly absorbed illumination. In DPBs free domains, the bipolar diffusion coefficient and carrier lifetime value at 300K were found gradually increasing with carrier density. The bipolar mobility vs. temperature dependence, μ. ~ T -k, provided a value k = 1.2 - 2 in range T < 100 K, thus indicating a negligible scattering by point and extended defects. These data indicated strong contribution of the carrier-density dependent but not defect-density governed scattering mechanisms, thus indicating high quality of the CF-PVT grown bulk cubic SiC. These studies were found in good correlation with the structural and photoluminescence characterization of the given crystal.