Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide

Hiroaki Sato; Ichiro Shoji; Jun Suda; Takashi Kondo

doi:10.4028/www.scientific.net/MSF.615-617.315

Paper Titles

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303

Features of Hot Hole Transport in 6Н-SiC
p.307

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311

Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

Microhardness of 6H- and 4H-SiC Substrates
p.323

Electrical and Mechanical Properties of Post-Annealed SiC_xN_y Films
p.327

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
p.331

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Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide

Abstract:

Second-order nonlinear-optical coefficients of 4H and 6H-SiC have been measured with the wedge technique. Using high-quality (11-20) samples as well as performing rigorous measurements and analyses, the three independent components, d31 (= d32), d15 (= d24), and d33, have been accurately determined. We have found that the nonlinear-optical coefficients are nearly the same between the measured 4H and 6H-SiC samples within the experimental accuracy; d31 = 5.4 pm/V, d15 = 6.2 pm/V, and d33 = 9.7pm/V.