Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide

Abstract:

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Second-order nonlinear-optical coefficients of 4H and 6H-SiC have been measured with the wedge technique. Using high-quality (11-20) samples as well as performing rigorous measurements and analyses, the three independent components, d31 (= d32), d15 (= d24), and d33, have been accurately determined. We have found that the nonlinear-optical coefficients are nearly the same between the measured 4H and 6H-SiC samples within the experimental accuracy; d31 = 5.4 pm/V, d15 = 6.2 pm/V, and d33 = 9.7pm/V.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

315-318

DOI:

10.4028/www.scientific.net/MSF.615-617.315

Citation:

H. Sato et al., "Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 315-318, 2009

Online since:

March 2009

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Price:

$35.00

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