Microhardness of 6H- and 4H-SiC Substrates

Charles R. Eddy; Ping Wu; Ilya Zwieback; Brenda L. VanMil; Rachael L. Myers-Ward; Joseph L. Tedesco; Andrew E. Souzis; D. Kurt Gaskill

doi:10.4028/www.scientific.net/MSF.615-617.323

Paper Titles

Features of Hot Hole Transport in 6Н-SiC
p.307

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311

Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

Microhardness of 6H- and 4H-SiC Substrates
p.323

Electrical and Mechanical Properties of Post-Annealed SiC_xN_y Films
p.327

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
p.331

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
p.335

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
p.339

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Microhardness of 6H- and 4H-SiC Substrates

Microhardness of 6H- and 4H-SiC Substrates

Abstract:

Knoop microhardness assessments were conducted on a variety of 6H- and 4H-SiC substrates to assess any appreciable differences that may need to be considered in wafer manufacture and general application. Nitrogen-doped, vanadium-doped and unintentionally doped (UID) substrates with both on-axis and 8° off-axis orientations were assessed. In general, the Knoop hardness values fell in the 2000 to 2500 kg/mm2 range (equivalent to approximately 20 to 25 GPa). Hardness values measured in the <1100> crystal direction were significantly higher than in the <11-20> direction. Undoped and vanadium-doped samples were harder than nitrogen-doped samples. For both 6H and 4H nitrogen-doped samples, the hardness was as much as 10% higher for 8° offcut wafers than for on-axis.