Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

Alexander A. Lebedev; Pavel L. Abramov; Nina V. Agrinskaya; Ven I. Kozub; Alexey N. Kuznetsov; Sergey P. Lebedev; Gagik A. Oganesyan; A.V. Chernyaev; Dmitrii Shamshur; Maria O. Skvortsova

doi:10.4028/www.scientific.net/MSF.615-617.335

Paper Titles

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

Microhardness of 6H- and 4H-SiC Substrates
p.323

Electrical and Mechanical Properties of Post-Annealed SiC_xN_y Films
p.327

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
p.331

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
p.335

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
p.339

Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
p.343

The Silicon Vacancy in SiC
p.347

Pulsed EPR Studies of the T_v2a Center in 4H-SiC
p.353

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Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

Abstract:

n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.