Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. A. Lebedev et al., "Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films", Materials Science Forum, Vols. 615-617, pp. 335-338, 2009