Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

Abstract:

Article Preview

n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

335-338

DOI:

10.4028/www.scientific.net/MSF.615-617.335

Citation:

A. A. Lebedev et al., "Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films", Materials Science Forum, Vols. 615-617, pp. 335-338, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.