The Silicon Vacancy in SiC

Erik Janzén; Adam Gali; Patrick Carlsson; Andreas Gällström; Björn Magnusson; Nguyen Tien Son

doi:10.4028/www.scientific.net/MSF.615-617.347

Paper Titles

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
p.331

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
p.335

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
p.339

Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
p.343

The Silicon Vacancy in SiC
p.347

Pulsed EPR Studies of the T_v2a Center in 4H-SiC
p.353

Si_CC_SiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC
p.357

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
p.361

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
p.365

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617The Silicon Vacancy in SiC

The Silicon Vacancy in SiC

Abstract:

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.