The Silicon Vacancy in SiC

Abstract:

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A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

347-352

DOI:

10.4028/www.scientific.net/MSF.615-617.347

Citation:

E. Janzén et al., "The Silicon Vacancy in SiC", Materials Science Forum, Vols. 615-617, pp. 347-352, 2009

Online since:

March 2009

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Price:

$35.00

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