SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

Uwe Gerstmann; A.P. Seitsonen; Francesco Mauri; Hans Jürgen von Bardeleben

doi:10.4028/www.scientific.net/MSF.615-617.357

Paper Titles

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
p.339

Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
p.343

The Silicon Vacancy in SiC
p.347

Pulsed EPR Studies of the T_v2a Center in 4H-SiC
p.353

Si_CC_SiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC
p.357

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
p.361

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
p.365

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC
p.369

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

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Si_CC_SiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

Abstract:

In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs SiCCSi + are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the SiC antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.