SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC

Abstract:

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In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs SiCCSi + are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the SiC antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

357-360

DOI:

10.4028/www.scientific.net/MSF.615-617.357

Citation:

U. Gerstmann et al., "SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 357-360, 2009

Online since:

March 2009

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$35.00

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