Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC

Adam Gali; T. Umeda; Erik Janzén; Norio Morishita; Takeshi Ohshima; Junichi Isoya

doi:10.4028/www.scientific.net/MSF.615-617.361

Paper Titles

Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
p.343

The Silicon Vacancy in SiC
p.347

Pulsed EPR Studies of the T_v2a Center in 4H-SiC
p.353

Si_CC_SiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC
p.357

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
p.361

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
p.365

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC
p.369

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Identification of the Negative Di-Carbon Antisite...

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC

Abstract:

We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of combined electron paramagnetic resonance (EPR) studies and first principles calculations. The pair of HEI5 and HEI6 EPR centers (S = 1/2, C1h symmetry) are associated with the cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on the comparison of the measured and calculated hyperfine tensors of 13C and 29Si atoms. We investigated the creation and annihilation of this defect as a function of electron-dose and annealing temperature.