Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of combined electron paramagnetic resonance (EPR) studies and first principles calculations. The pair of HEI5 and HEI6 EPR centers (S = 1/2, C1h symmetry) are associated with the cubic and hexagonal dicarbon antisite defects, respectively. This assignment is based on the comparison of the measured and calculated hyperfine tensors of 13C and 29Si atoms. We investigated the creation and annihilation of this defect as a function of electron-dose and annealing temperature.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. Gali et al., "Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 361-364, 2009