Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Abstract:

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Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

377-380

DOI:

10.4028/www.scientific.net/MSF.615-617.377

Citation:

N. T. Son et al., "Defects Introduced by Electron-Irradiation at Low Temperatures in SiC", Materials Science Forum, Vols. 615-617, pp. 377-380, 2009

Online since:

March 2009

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$35.00

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