Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes

Giovanni Alfieri; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.615-617.389

Paper Titles

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
p.381

Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.385

Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
p.389

Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
p.393

Defects in High Energy Ion Irradiated 4H-SiC
p.397

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
p.401

Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
p.405

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Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes

Abstract:

As-grown and 116 keV electron-irradiated n-type 3C and 4H-SiC epilayers were electrically characterized by means of Fourier-transform deep level transient spectroscopy (FT-DLTS). A total of four deep levels, in the 0.20-0.73 eV range, below the conduction band, have been detected. By considering the band gap offset between 4H and 3C polytypes, we found that the deepest level in 3C-SiC labeled K3 (Ec-0.73 eV) has an energy position close to the EH6/7 level in 4H-SiC. An electron-dose dependence study of K3 and EH6/7, reveals that these two centers display a similar dose dependence behavior, suggesting that they may be related to the same defect.