Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

Bernd Zippelius; M. Krieger; Heiko B. Weber; Gerhard Pensl; Birgit Kallinger; Jochen Friedrich; Bernd Thomas

doi:10.4028/www.scientific.net/MSF.615-617.393

Paper Titles

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
p.381

Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.385

Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
p.389

Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
p.393

Defects in High Energy Ion Irradiated 4H-SiC
p.397

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
p.401

Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
p.405

Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
p.409

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Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

Abstract:

4H-SiC epilayers are homoepitaxially grown on 4H-SiC substrates with different C/Si-ratios and different growth rates by the chemical vapour deposition method. DLTS investigations are applied in order to trace energetically deep states of electrically active point defects and extended defects, which may act as the source for the degradation of electronic devices. In addition, the dependence of the DLTS signal heights on the filling pulse length is studied.