Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations

Abstract:

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1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

409-412

Citation:

J. W. Steeds et al., "Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations", Materials Science Forum, Vols. 615-617, pp. 409-412, 2009

Online since:

March 2009

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Price:

$38.00

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