Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
J. W. Steeds et al., "Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations", Materials Science Forum, Vols. 615-617, pp. 409-412, 2009