Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
p.393
p.393
Defects in High Energy Ion Irradiated 4H-SiC
p.397
p.397
Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
p.401
p.401
Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
p.405
p.405
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
p.409
p.409
Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing
p.413
p.413
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
p.417
p.417
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
p.423
p.423
Interface States and Barrier Heights on Metal/4H-SiC Interfaces
p.427
p.427
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
Abstract:
1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.
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Periodical:
Materials Science Forum (Volumes 615-617)
Pages:
409-412
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Online since:
March 2009
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© 2009 Trans Tech Publications Ltd. All Rights Reserved
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