Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing

John W. Steeds

doi:10.4028/www.scientific.net/MSF.615-617.413

Paper Titles

Defects in High Energy Ion Irradiated 4H-SiC
p.397

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
p.401

Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
p.405

Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
p.409

Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing
p.413

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
p.417

Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
p.423

Interface States and Barrier Heights on Metal/4H-SiC Interfaces
p.427

Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
p.431

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Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing

Abstract:

An attempt is made, in the light of recent developments in the identification of intrinsic defects in 4H SiC, to account for differences that have been reported after electron-irradiation of different samples and to discuss the progression of defects that is observed on annealing. The emphasis is placed on internal stress in the material and on defects involving carbon anti-sites and silicon vacancies because they are readily detected by photoluminescence.