Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing

Abstract:

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An attempt is made, in the light of recent developments in the identification of intrinsic defects in 4H SiC, to account for differences that have been reported after electron-irradiation of different samples and to discuss the progression of defects that is observed on annealing. The emphasis is placed on internal stress in the material and on defects involving carbon anti-sites and silicon vacancies because they are readily detected by photoluminescence.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

413-416

DOI:

10.4028/www.scientific.net/MSF.615-617.413

Citation:

J. W. Steeds "Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing", Materials Science Forum, Vols. 615-617, pp. 413-416, 2009

Online since:

March 2009

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Price:

$35.00

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