Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers

Pavel A. Ivanov; Alexander S. Potapov; Tat'yana P. Samsonova

doi:10.4028/www.scientific.net/MSF.615-617.431

Paper Titles

Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing
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Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
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Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
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Interface States and Barrier Heights on Metal/4H-SiC Interfaces
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Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
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Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
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Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach
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Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
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Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
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Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers

Abstract:

Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined.