Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
P. A. Ivanov et al., "Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers", Materials Science Forum, Vols. 615-617, pp. 431-434, 2009