Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers

Abstract:

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Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

431-434

DOI:

10.4028/www.scientific.net/MSF.615-617.431

Citation:

P. A. Ivanov et al., "Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers", Materials Science Forum, Vols. 615-617, pp. 431-434, 2009

Online since:

March 2009

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Price:

$35.00

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