Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

Owen James Guy; Amador Pérez-Tomás; Michael R. Jennings; Michal Lodzinski; A. Castaing; Philip  Andrew Mawby; James A. Covington; S.P. Wilks; R. Hammond; D. Connolly; S. Jones; J. Hopkins; T. Wilby; N. Rimmer; K. Baker; S. Conway; S. Evans

doi:10.4028/www.scientific.net/MSF.615-617.443

Paper Titles

Interface States and Barrier Heights on Metal/4H-SiC Interfaces
p.427

Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
p.431

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
p.435

Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach
p.439

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
p.443

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
p.457

Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
p.461

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Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

Abstract:

This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.