Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

Abstract:

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This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

443-446

DOI:

10.4028/www.scientific.net/MSF.615-617.443

Citation:

O. J. Guy et al., "Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties", Materials Science Forum, Vols. 615-617, pp. 443-446, 2009

Online since:

March 2009

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Price:

$35.00

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