Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments

Abstract:

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Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

461-464

DOI:

10.4028/www.scientific.net/MSF.615-617.461

Citation:

A. Declémy et al., "Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments", Materials Science Forum, Vols. 615-617, pp. 461-464, 2009

Online since:

March 2009

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Price:

$35.00

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