Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments

Alain Declémy; Cyril Dupeyrat; Lionel Thomé; Aurelien Debelle

doi:10.4028/www.scientific.net/MSF.615-617.461

Paper Titles

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
p.443

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
p.457

Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
p.461

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
p.465

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
p.469

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
p.473

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
p.477

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Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments

Abstract:

Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).