Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. Declémy et al., "Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments", Materials Science Forum, Vols. 615-617, pp. 461-464, 2009