SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Hervé Peyre; Joerg Pezoldt; M. Voelskow; Wolfgang Skorupa; Jean Camassel

doi:10.4028/www.scientific.net/MSF.615-617.465

Paper Titles

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
p.457

Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
p.461

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
p.465

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
p.469

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
p.473

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
p.477

Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
p.481

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617SIMS Investigation of Gex(4H-SiC)1-x Solid...

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Abstract:

A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs+ SIMS technique is best suited to investigate Gex(4H-SiC)1-x solid solutions up to x=0.2, while the O2+ SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. On the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by ~30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.