Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation

Takeshi  Mitani; Ryo Hattori; Masanobu Yoshikawa

doi:10.4028/www.scientific.net/MSF.615-617.481

Paper Titles

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
p.465

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
p.469

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
p.473

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
p.477

Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
p.481

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC
p.485

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
p.489

Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
p.493

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
p.497

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Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation

Abstract:

Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from visible to near infrared. CL observation has shown that point defects diffused out from implanted region to ~10 µm depth during activation annealing. Annealing temperature dependence of the depth distribution of CL intensity of these defects has suggested that structural transformation of point defects proceeds as “silicon vacancy (VSi) → carbon vacancy-antisite pair (VC-CSi ; UD2) → antisite pair (CSi-SiC ; DI)”.