Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from visible to near infrared. CL observation has shown that point defects diffused out from implanted region to ~10 µm depth during activation annealing. Annealing temperature dependence of the depth distribution of CL intensity of these defects has suggested that structural transformation of point defects proceeds as “silicon vacancy (VSi) → carbon vacancy-antisite pair (VC-CSi ; UD2) → antisite pair (CSi-SiC ; DI)”.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
T. Mitani et al., "Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation", Materials Science Forum, Vols. 615-617, pp. 481-484, 2009