Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.615-617.489

Paper Titles

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
p.473

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
p.477

Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
p.481

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC
p.485

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
p.489

Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
p.493

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
p.497

Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
p.501

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
p.505

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Model Calculation of SiC Oxide Growth Rate Based...

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

Abstract:

We proposed a kinetic model for SiC oxidation, named ‘silicon and carbon (Si-C) emission model’, taking into account the emission of Si and C atoms from the SiC–oxide interface, which suppresses the oxidation rate at the interface. Based on the model, we calculated oxide growth rates for SiC (0001) Si- and (000–1) C-face and found that the calculated values exhibit good fits to the measured ones in the entire oxide thickness range for both faces. We also calculated depth profiles of Si and C interstitials and oxidants, and discussed the oxidation mechanism of SiC as well as the difference in the oxidation process of Si-face and C-face.