Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Abstract:

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Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

477-480

DOI:

10.4028/www.scientific.net/MSF.615-617.477

Citation:

M. Nagano et al., "Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing", Materials Science Forum, Vols. 615-617, pp. 477-480, 2009

Online since:

March 2009

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Price:

$35.00

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