Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Masahiro Nagano; Hidekazu Tsuchida; Takuma Suzuki; Tetsuo Hatakeyama; Junji Senzaki; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.615-617.477

Paper Titles

Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
p.461

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
p.465

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
p.469

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
p.473

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
p.477

Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
p.481

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC
p.485

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
p.489

Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
p.493

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Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Abstract:

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.