Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
M. Nagano et al., "Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing", Materials Science Forum, Vols. 615-617, pp. 477-480, 2009