Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC

Abstract:

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In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with kick-out and substitution mechanisms was observed. The activation energy and prefactor were calculated from Arrhenius plot for each diffusion branch. It has been established that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of the diffusion profile has mostly deep level D centers.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

453-456

DOI:

10.4028/www.scientific.net/MSF.615-617.453

Citation:

A.V. Bolotnikov et al., "Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 453-456, 2009

Online since:

March 2009

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Price:

$35.00

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