Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC

A.V. Bolotnikov; Peter G. Muzykov; Anant K. Agarwal; Qing Chun Jon Zhang; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.615-617.453

Paper Titles

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
p.435

Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach
p.439

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
p.443

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
p.457

Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments
p.461

SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2
p.465

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
p.469

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Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC

Abstract:

In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with kick-out and substitution mechanisms was observed. The activation energy and prefactor were calculated from Arrhenius plot for each diffusion branch. It has been established that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of the diffusion profile has mostly deep level D centers.