Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging

Yoosuf N. Picard; Christopher Locke; Christopher L. Frewin; Mark E. Twigg; Stephen E. Saddow

doi:10.4028/www.scientific.net/MSF.615-617.435

Paper Titles

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
p.417

Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
p.423

Interface States and Barrier Heights on Metal/4H-SiC Interfaces
p.427

Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
p.431

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
p.435

Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach
p.439

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
p.443

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Crystalline Quality and Surface Morphology of...

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging

Abstract:

Electron channeling contrast imaging (ECCI) has been utilized to evaluate the surface morphology and crystalline quality of 3C-SiC films grown by chemical vapor deposition (CVD) on (100) and (111) Si substrates. ECCI in this study was performed using an electron backscatter diffraction (EBSD) system equipped with forescatter diode detectors and mounted inside a commercial scanning electron microscope (SEM). This nondestructive method permits direct dislocation imaging through local fluctuations in forescattered electron yield attributable to lattice strain. Coordinated ECCI, SEM, and EBSD analysis of film surfaces allowed correlations between film orientation, surface morphology, and dislocation behavior. Evidence of lateral dislocations parallel to <110> directions and atomic step pinning by dislocations was observed.