Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach

Sergey Y. Davydov; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.615-617.439

Paper Titles

Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
p.423

Interface States and Barrier Heights on Metal/4H-SiC Interfaces
p.427

Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
p.431

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
p.435

Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach
p.439

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
p.443

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
p.449

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
p.453

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
p.457

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Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach

Abstract:

The three-layer heterostructure formed by the two domains of the cubical 3C-SiC polytype and hexagonal NH-SiC (N = 4, 6, 8) layer is considered. The Poisson equation with the account of spontaneous polarization for the hexagonal component has been solved with the assumption that the resulting electric field can be treated as a sum of contact and polarization field components. The analytical expression for the value of the dimensionless band-bending potentials on the interfaces is found. It is demonstrated that the account of the spontaneous polarization leads to the asymmetry of the energy diagram, which results in an inequality of the quantum wells located at the interfaces. The possibility of the indirect electronic transition between the states of these quantum wells is considered.