Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Hideharu Matsuura; Miyuki Takahashi; Yoshitaka Kagawa; Shoichi Tano; Takayuki Miyake

doi:10.4028/www.scientific.net/MSF.615-617.385

Paper Titles

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC
p.369

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
p.381

Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.385

Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
p.389

Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
p.393

Defects in High Energy Ion Irradiated 4H-SiC
p.397

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
p.401

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Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Abstract:

To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. Seven intrinsic defects are detected in the high-purity semi-insulating 4H-SiC. From the temperature dependence of the emission rate of each intrinsic defect, its activation energy is approximately determined.