A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth

Alkyoni Mantzari; Christos B. Lioutas; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.615-617.331

Paper Titles

Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide
p.315

Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique
p.319

Microhardness of 6H- and 4H-SiC Substrates
p.323

Electrical and Mechanical Properties of Post-Annealed SiC_xN_y Films
p.327

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
p.331

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
p.335

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
p.339

Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
p.343

The Silicon Vacancy in SiC
p.347

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617A TEM Study of Inversion Domain Boundaries...

A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth

Abstract:

The aim of the present work is to study the evolution and the annihilation of inversion domain boundaries in 3C-SiC during growth. For this investigation conventional and high resolution transmission electron microscopy were employed. It is shown that the physical mechanism which results in the annihilation of inversion domain boundaries in 3C-SiC starting from the 3C-SiC/Si interface is the change of the crystallographic planes in which inversion domain boundaries propagate into the {111} ones. In all cases modeling and simulation analysis by EMS software [1] are in agreement with the experimental results.