A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth

Abstract:

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The aim of the present work is to study the evolution and the annihilation of inversion domain boundaries in 3C-SiC during growth. For this investigation conventional and high resolution transmission electron microscopy were employed. It is shown that the physical mechanism which results in the annihilation of inversion domain boundaries in 3C-SiC starting from the 3C-SiC/Si interface is the change of the crystallographic planes in which inversion domain boundaries propagate into the {111} ones. In all cases modeling and simulation analysis by EMS software [1] are in agreement with the experimental results.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

331-334

DOI:

10.4028/www.scientific.net/MSF.615-617.331

Citation:

A. Mantzari et al., "A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth", Materials Science Forum, Vols. 615-617, pp. 331-334, 2009

Online since:

March 2009

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Price:

$35.00

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