Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique

Abstract:

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We applied a picosecond dynamic grating technique for investigation of thermal diffusivity, sound velocity, thermo-optic and photoelastic coefficients in heavily doped 4H-SiC substrates. Spatial modulation of thermal properties was achieved by intraband carrier absorption at excitation by an IR picosecond laser pulse (1064 nm) and subsequent carrier thermalisation. Decay of dynamic grating at its various periods and sample temperatures was monitored at 532 nm wavelength. The thermal diffusivity DT = 0.94 cm2/s, thermo-optic coefficient dn/dT = 3.610–5 K-1 and effective photoelastic constant = – 0.10 were determined at 300 K. DT value increased at lower temperatures and saturated below 100 K. Temperature dependences of thermo-optic coefficient and thermal expansion were found in good correlation with heat capacity peculiarities.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

319-322

DOI:

10.4028/www.scientific.net/MSF.615-617.319

Citation:

P. Ščajev et al., "Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique", Materials Science Forum, Vols. 615-617, pp. 319-322, 2009

Online since:

March 2009

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$35.00

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