Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Laurent Ottaviani; Olivier Palais; Damien Barakel; Marcel Pasquinelli

doi:10.4028/www.scientific.net/MSF.615-617.295

Paper Titles

An Effective Method of Characterization of SiC Substrates
p.279

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303

Features of Hot Hole Transport in 6Н-SiC
p.307

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
p.311

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Minority Carrier Lifetime Measurements in Specific...

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Abstract:

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.