Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Abstract:

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We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

295-298

DOI:

10.4028/www.scientific.net/MSF.615-617.295

Citation:

L. Ottaviani et al., "Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay", Materials Science Forum, Vols. 615-617, pp. 295-298, 2009

Online since:

March 2009

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Price:

$35.00

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