An Effective Method of Characterization of SiC Substrates

Marina G. Mynbaeva; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.615-617.279

Paper Titles

Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
p.263

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes
p.267

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

An Effective Method of Characterization of SiC Substrates
p.279

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617An Effective Method of Characterization of SiC...

An Effective Method of Characterization of SiC Substrates

Abstract:

An effective low-cost technique for rapid characterization of SiC ingots at the early stage of substrate manufacturing process is proposed. The method allows for revealing simultaneously open-micropipes, polytype inclusions, low grain boundary regions, and non-uniform resistivity. The idea of the method is to subject full-size single SiC wafer cut from an ingot to anodization treatment. The porous structure formed as a result of the treatment decorates existing defect regions via the effect of non-homogeneity in the porous structure caused by the defect-related internal stress, as well as by non-uniformity in the doping level across the wafer. The method is inexpensive, not time consuming and not fully destructive. It can also be combined with the standard selective KOH-etching technique.