An Effective Method of Characterization of SiC Substrates

Abstract:

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An effective low-cost technique for rapid characterization of SiC ingots at the early stage of substrate manufacturing process is proposed. The method allows for revealing simultaneously open-micropipes, polytype inclusions, low grain boundary regions, and non-uniform resistivity. The idea of the method is to subject full-size single SiC wafer cut from an ingot to anodization treatment. The porous structure formed as a result of the treatment decorates existing defect regions via the effect of non-homogeneity in the porous structure caused by the defect-related internal stress, as well as by non-uniformity in the doping level across the wafer. The method is inexpensive, not time consuming and not fully destructive. It can also be combined with the standard selective KOH-etching technique.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

279-282

DOI:

10.4028/www.scientific.net/MSF.615-617.279

Citation:

M. G. Mynbaeva and A. A. Lebedev, "An Effective Method of Characterization of SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 279-282, 2009

Online since:

March 2009

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Price:

$35.00

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