An effective low-cost technique for rapid characterization of SiC ingots at the early stage of substrate manufacturing process is proposed. The method allows for revealing simultaneously open-micropipes, polytype inclusions, low grain boundary regions, and non-uniform resistivity. The idea of the method is to subject full-size single SiC wafer cut from an ingot to anodization treatment. The porous structure formed as a result of the treatment decorates existing defect regions via the effect of non-homogeneity in the porous structure caused by the defect-related internal stress, as well as by non-uniformity in the doping level across the wafer. The method is inexpensive, not time consuming and not fully destructive. It can also be combined with the standard selective KOH-etching technique.