Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers

Abstract:

Article Preview

Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

287-290

DOI:

10.4028/www.scientific.net/MSF.615-617.287

Citation:

G. Chung et al., "Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers", Materials Science Forum, Vols. 615-617, pp. 287-290, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.