Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.