Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers

Gil Yong Chung; Mark J. Loboda; Mike F. MacMillan; Jian Wei Wan

doi:10.4028/www.scientific.net/MSF.615-617.287

Paper Titles

Dislocation-Induced Birefringence in Silicon Carbide
p.271

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
p.275

An Effective Method of Characterization of SiC Substrates
p.279

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
p.283

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
p.287

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
p.291

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay
p.295

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
p.299

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
p.303

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Wafer Level Recombination Carrier Lifetime...

Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers

Abstract:

Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.